Journal of EEIS
Current Result Document :
| 한글제목(Korean Title) |
Design and Analysis of GAIVBE System and Application to the Growth of Semiconductor Thin Films - On the Growth of GaAs on Si - |
| 영문제목(English Title) |
Design and Analysis of GAIVBE System and Application to the Growth of Semiconductor Thin Films - On the Growth of GaAs on Si - |
| 저자(Author) |
Ey Goo Kang
Man Young Sung
Sung Hee Park
|
| 원문수록처(Citation) |
VOL 03 NO. 01 PP. 0110 ~ 0116 (1998. 02) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
A single-crystalline epitaxial film of GaAs has been grown on Si using a gas assisted-ionized vapour beam epitaxial technique. The native oxide layer on the silicon substrate was removed at 550%u2103 by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550%u2103. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is also demonstrated through fabrication of GaAs MODFET on Si substrates.
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| 키워드(Keyword) |
Semiconductors
GAIVBE System
Semiconductor
Thin Films
|
| 파일첨부 |
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